Ultra-Low Power Designing for CMOS Sequential Circuits
نویسندگان
چکیده
منابع مشابه
Design of Ultra-low Leakage Power Sequential Circuits
Reduction in leakage power has become an important concern in low-voltage, low-power, and highperformance applications. International Technology Roadmap for Semiconductors projects that leakage power consumption may come to dominate total chip power consumption as the technology feature size shrinks. A novel approach for ultra-low leakage CMOS circuit structure is “Sleepy keeper.” Sleepy keeper...
متن کاملUltra-low power circuits for power management
who gave me the opportunity to work in this group. I am particularly grateful for the assistance given by my patient supervisor Janko Katic. His guidance and suggestions were indispensable for the design of the presented circuits. The excellent plan gave me the proper passion to carry through this Master Thesis. I would thank Ayobami and Jiazuo for sharing with me the office and a portion of th...
متن کاملStanford Ultra Low Power CMOS
Stanford has been developing a low voltage CMOS technology which could have a signiicant impact on a wide range of products from personal digital assistants to volume silicon supercomputers. The technology achieves a unique combination of high performance and low energy per operation by combining aggressive voltage scaling with process optimization. The approach is based on the insight that the...
متن کاملDesigning Low-Power Digital CMOS
Advances in VLSI fabrication in recent years have greatly increased the levels of integration making possible the implementation of highly complex algorithms such as Viterbi decoders, discrete cosine transforms etc. Smaller integrated circuit device and feature sizes have lead naturally to increased speeds. Expectations and demand have grown for the continuing development of both speed and func...
متن کاملA Gate-Level Leakage Power Reduction Method for Ultra-Low-Power CMOS Circuits†
In order to reduce the power dissipation of CMOS products, semiconductor manufacturers are reducing the power supply voltage. This requires that the transistor threshold voltages be reduced as well to maintain adequate performance and noise margins. However, this increases the subthreshold leakage current of p and n MOSFETs, which starts to offset the power savings obtained from power supply re...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: International Journal of Communications, Network and System Sciences
سال: 2015
ISSN: 1913-3715,1913-3723
DOI: 10.4236/ijcns.2015.85016